21–2
Table 21–1. External RAM Block Inputs and Outputs
Chapter 21: Simulation Library
Signal
ReadWaitRequest
ReadDataValid
Direction
Output
Output
Description
Stalls the interface when the Avalon-MM interface cannot respond immediately to a
read request.
Marks the rising clock edge when ReadData is asserted. Indicates that valid data is
present on the ReadData lines.
Table 21–2 shows the External RAM block parameters.
Table 21–2. External RAM Block Parameters
Name
Data Width
Address Width
Wait States Per Write
Maximum Latency
Size
Offset
Value
8, 16, 32, 64,
or 128
1–32
0–10
1–255
1–2 n (1)
1–2 n (1)
Description
Specifies the number of bits for the data. No other values are supported. 64 and
128 bit data widths require a Simulink fixed-point license.
Specifies the number of bits n for the address.
Specifies a fixed number of wait states for each write transfer.
Specifies the latency for pipelined read transfers.
Specifies the total size of the RAM in bytes (the number of addresses when you
use a range of addresses).
Specifies an offset for the RAM start address (the start address when you use a
range of addresses.
Notes to Table 21–2
(1) The size added to the offset must be less than 2 n where n is the address width.
Figure 21–1 shows an design example with the External RAM block.
Figure 21–1. External RAM Block Example
Multiple Port External RAM
The Multiple Port External RAM block is a simulation model of a multiple port
external RAM block. It stores and retrieves data from a range of addresses and is
compatible with the Avalon-MM interface.
DSP Builder Handbook
Volume 2: DSP Builder Standard Blockset
November 2013 Altera Corporation
相关PDF资料
IR11662SPBF IC CNTROL SMART RECTIFIER 8-SOIC
IR1166STRPBF IC MOSFET DRIVER N-CH 200V 8SOIC
IR11672ASPBF IC MOSFET DRIVER 200V 8-SOIC
IR1167ASTRPBF IC SMART SECONDARY DRIVER 8-SOIC
IR11682STRPBF IC MOSFET DRIVER DUAL 200V 8SOIC
IR1168SPBF IC MOSFET DRIVER DUAL 200V 8SOIC
IR1176STR IC DRIVER RECT SYNC 5V 4A 20SSOP
IR2010SPBF IC DRIVER HIGH/LOW SIDE 16SOIC
相关代理商/技术参数
IP-TRIETHERNET 功能描述:开发软件 Triple Spd Ethernet MegaCore RoHS:否 制造商:Atollic Inc. 产品:Compilers/Debuggers 用于:ARM7, ARM9, Cortex-A, Cortex-M, Cortex-R Processors
IP-TRIETHERNETF 功能描述:开发软件 3x Spd Ethernet MAC MegaCore RoHS:否 制造商:Atollic Inc. 产品:Compilers/Debuggers 用于:ARM7, ARM9, Cortex-A, Cortex-M, Cortex-R Processors
IPTV-OPTION-INS970 制造商:3M Electronic Products Division 功能描述:IPTV OPTION FOR INS970
IPU039N03L G 功能描述:MOSFET N-CH 30V 50A 3.9mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IPU039N03LG 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS?3 Power-Transistor Features Fast switching MOSFET for SMPS
IPU039N03LGXK 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-251
IPU04N03LA 功能描述:MOSFET N-CH 25V 50A IPAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:OptiMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
IPU04N03LA G 功能描述:MOSFET N-CH 25V 50A IPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:OptiMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件